发布于:2018-03-20 星期二 17:20:12  点击数:13399

liguoli_lily@hnu.edu.cn   liguoli_lily@126.com


2014-2017年:法语鲁汶大学 (电子工程),博士学位,导师:Prof. Denis Flandre;
2013-2017年:湖南大学 (电路与系统), 博士学位,导师:曾云 教授;
2007-2011年:湖南大学 (电子科学与技术),学士学位。






科研方向:高性能半导体光电器件 (合作:廖蕾教授课题组及鲁汶大学)
1. 光电探测 (基于二维及传统材料);
2. 场效应管 (基于金属氧化物半导体及二维材料)。


1. 重庆市自然科学基金(面上),2021-2024年度;
2. 高端外国专家引进计划(国家科学技术部),2021-2022年度;
3. 国家自然科学基金(青年),2021-2023年度;
4. 湖南省自然科学基金(青年),2020-2022年度;
5. 高端外国专家引进计划(国家科学技术部),2020年度;
6. 湖南大学中青年教师购置仪器设备专项资助,2018年度;
7. 湖南大学科研启动经费,2017-2022年度。


I) 第一及通讯作者
1. Origin of Low-Temperature Negative Transconductance in Multilayer MoS2 Transistors, Applied Physics Letters, 2021.
2. Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors, IEEE Electron Device Letters, 2021.
3. Gate-tunable the interface properties of GaAs-WSe2 (1D-2D) vdWs heterojunction for high-responsivity, self-powered photodetector, Applied Physics Letters, 2021.
4. Impact of hydrogen dopants incorporation on InGaZnO, ZnO and In2O3 thin film transistors, Physical Chemistry Chemical Physics, 2020.
5. Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral PIN Gated Diode, IEEE Transactions on Electron Devices, 2019.
6. Exploring and Suppressing Kink Effect of Black Phosphorus Field-Effect Transistors Operating in Saturation Regime, Nanoscale, 2019.
7. Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin Film Transistor, Advanced Electronic Materials, 2019.
8. Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode, Journal of Physics D: Applied Physics, 2019.
9. Understanding Hydrogen and Nitrogen Doping on Active Defects in Amorphous In-Ga-Zn-O Thin Film Transistors, Applied Physics Letters, 2018.
10. Leakage Current and Low Frequency Noise Analysis and Reduction in a Suspended SOI Lateral PIN Diode, IEEE Transactions on Electron Devices, 2017.
11. Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors, IEEE Transactions on Industrial Electronics, 2017.
12. Silicon-on-Insulator Photodiode on Micro-Hotplate Platform with Improved Responsivity and High-Temperature Application, IEEE Sensors Journal, 2016.
13. 透明栅控SOI薄膜横向PIN光电探测器的光电特性,国防科技大学学报,2015.
14. Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation, Optik, 2014.
15. Analysis and Simulation for Current-Voltage Models of Thin-Film Gated SOI Lateral PIN Photodetectors, Optik, 2014.
II) 代表性合作论文
1. High-responsivity broadband photodetection of ultra-thin In2S3/CIGS heterojunction on steel, Optics Letters, 2021.
2.Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors, Nature Electronics, 2021.
3. Black Phosphorus Field Effect Transistors Stable in Harsh Conditions via Surface Engineering, Applied Physics Letters, 2020.
4. Substantially Improving Device Performance of All-Inorganic Perovskite-Based Phototransistors via Indium Tin Oxide Nanowire Incorporation, Small, 2020.
5. Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance, IEEE Transactions on Electron Devices, 2018.
6. Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors, IEEE Electron Device Letters, 2017.
7. Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga) Se2 solar cell performances using SCAPS 1-D model, Solar Energy, 2017.

1. Defect Engineering in n-Type Oxide Semiconductor TFTs, International Conference on Display Technology (ICDT 2021), Beijing, China, 30 May-2 June, 2021.
2. H/N Doping and Defect Compensation in n-Type Metal Oxide Semiconductor Thin-Film Transistors, CAD-TFT International Workshop, Tarragona, Spain, 9-11 July, 2019.
3. Electrical Performance Enhancement of Bilayer Stack and N/H Codoping in Thin-Film Transistors, CAD-TFT Conference, Shenzhen, China, 16-18 November, 2018.
4. Understanding Nitrogen and Hydrogen Doping on Device Electrical Performances and Active Defects in Amorphous In-Ga-Zn-O Thin Film Transistors, SID-China, Changchun, China, 19-21 August, 2018.
5. Operation of Suspended Lateral SOI PIN Photodiode with Aluminum Back Gate, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria, 25-27 January, 2016.
6. Wide Band Study of Silicon-on-Insulator Photodiodes on Suspended Micro-Hotplates Platforms, International Conference of IC Design and Technology (ICICDT), Leuven IMEC, Belgium, 1-3 June, 2015.

Chapter 5 of Semiconductor Devices in Harsh Conditions, CRC Press, November, 2016, ISBN 9781498743808.