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陈卓俊

发布于:2018-03-20 星期二 13:07:58  点击数:13970

陈卓俊,湖南大学物理与微电子科学学院副教授、博士生导师。

研究领域:高可靠集成电路与器件设计

办公地址:物电院A407

邮箱:zjchen@hnu.edu.cn

欢迎有志于从事集成电路设计的研究生和本科生加入我的科研团队。

基本信息

主要从事高可靠集成电路与器件设计,包括抗辐射混合信号集成电路设计、超低温高速接口芯片设计、存算一体芯片设计等,具有丰富的流片经验与资源。目前承担半导体集成电路、集成电路应用和集成电路概述三门本科生课程。主持1项国家自科基金、1项省自科基金、3项横向项目、2项开放课题、1项科研启动项目,参与1项长沙市重大专项、1项湖南省重点研发计划。以第一作者或唯一通讯作者身份在IEEE TNS, IEEE TAES等顶级或权威期刊发表SCI论文13篇,发表NSREC, RADECS等顶级或权威国际会议论文6篇,授权国家发明专利10项。近两年指导本科生以第一作者发表SCI论文4篇、授权国家发明专利1项。

教育背景

2008年09月-2012年07月:湘潭大学,微电子学专业,工学学士

2012年09月-2017年07月:中国科学院上海微系统与信息技术研究所,微电子学与固体电子学,工学博士,导师:邹世昌院士

工作履历

2017年07月-2019年12月:湖南大学,物理与微电子科学学院,助理教授

2020年01月-至今:湖南大学,物理与微电子科学学院,副教授

学术兼职

CCF集成电路设计专业组委员

CCF容错专委委员

研究领域

1、抗辐射混合信号集成电路设计

2、超低温高速接口芯片设计

3、存算一体安全芯片设计

4、抗辐射高压功率器件设计

科研项目

2020.01-2021.12, 企事业单位委托横向项目, 主持。

2019.10-2020.04, 企事业单位委托横向项目, 主持。

2019.01-2021.12, 国家自然科学基金青年项目, 主持。

2019.01-2021.12, 湖南省自然科学基金青年项目, 主持。

2018.01-2018.12, 企事业单位委托横向项目, 主持。

2017.09-2021.09, 科研启动项目, 主持。


学术成果

期刊论文

13. Zhuojun Chen*, Chenchen Zhang, Ming Wu, Teng Wang, Yun Zeng, Xin Wan, Hu Jin, Jun Xu, Minghua Tang, Analysis and Mitigation of Single-Event Gate Rupture in VDMOS with Termination Structure, IEEE Transactions on Nuclear Science, 2021, early access.

12. Zhuojun Chen*, Judi Zhang, Shuangchun Wen, Ya Li, Qinghui Hong, Competitive Neural Network Circuit Based on Winner-Take-All Mechanism and Online Hebbian Learning Rule, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021, early access.

11. Wangze Ni, Zhen Dong, Bairun Huang, Yichi Zhang, Zhuojun Chen*, A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor, IEEE Access, 2021, 46709-46716.

10. Zhuojun Chen*, Ding Ding, Yemin Dong, Yi Shan, Yun Zeng, Jiantou Gao, Design of a High-performance Low-cost Radiation-Hardened Phase-Locked Loop for Space Application, IEEE Transactions on Aerospace and Electronic Systems, 2020, 56 (5): 3588-3598.

9. Ming Wu, Chenchen Zhang, Wei Peng, Jun Xu, Hu Jin, Yun Zeng, Zhuojun Chen*, A Radiation-Hardened Dual-Direction SCR Based on LDMOS for ESD Protection in the Extreme Radiation Environment, IEEE Transactions on Nuclear Science, 2020, 67 (4): 708-715.

8. Ming Wu, Wenzhao Lu, Chenchen Zhang, Wei Peng, Yun Zeng, Hu Jin, Jun Xu, Zhuojun Chen*, The Impact of Radiation and Temperature Effects on Dual-Direction SCR Devices for on-Chip ESD Protections, Semiconductor Science and Technology, 2020, 35(4): 045016.

7. Zhuojun Chen*, Wenzhao Lu, Ming Wu, Wei Peng, Yuanyuan Hu, Bo Li, Yun Zeng, Xiangliang Jin, A compact LDMOS DDSCR for HV ESD protections with high robustness and reliability, Solid-State Electronics, 2019, 161, 107640.

6. Shuyun Zheng, Yun Zeng, Zhuojun Chen*, Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors, IEEE Access, 2019, 79989 - 79996.

5. Zhuojun Chen*, Ding Ding, Yemin Dong, Yi Shan, Shuxing Zhou, Yuanyuan Hu, Yunlong Zheng, Chao Peng, Rongmei Chen, Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop, IEEE Transactions on Nuclear Science, 2018, 65(4): 997~1004.

4. Zhuojun Chen*, Min Lin, Ding Ding, Yunlong Zheng, Zehua Sang, Shichang Zou, Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation, IEEE Transactions on Nuclear Science, 2017, 64(1): 106~112.

3. Zhuojun Chen*, Min Lin, Yunlong Zheng, Zuodong Wei, Shuigen Huang, Shichang Zou, Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology , IEEE Transactions on Nuclear Science, 2016, 63(4): 2402~2408.

2. Zhuojun Chen, Yongguang Xiao, Minghua Tang*, Ying Xiong, Jianqiang Huang, Jiancheng Li, Xiaochen Gu, Yichun Zhou, Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs , IEEE Transactions on Electron Devices, 2012.12, 59(12): 3292~3298.

1. Yongguang Xiao, Zhuojun Chen, Minghua Tang*, Zhenhua Tang, Shaoan Yan, Jiancheng  Li, Xiaochen Gu, Yichun Zhou, Xiaoping Ouyang, Simulation of Electrical Characteristics in Negative Capacitance Surrounding-Gate Ferroelectric Field-Effect Transistors , Applied Physics Letters, 2012.12.17, 101(25).

 

国际会议论文(6篇)

1. Zhuojun Chen, Zhiqiang Wu,Ming Wu, Wei Peng, Yun Zeng, Xiangliang Jin, Binhong Li, Bo Li, Comparative Study of Total Ionizing Dose Effects on the Silicon-Controlled Rectifier Devices for HV and LV ESD Protections, 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

2. Zhuojun Chen, Wenzhao Lu, Ming Wu, Wei Peng, Yun Zeng, Xiangliang Jin, A comprehensive study of a bidirectional ESDprotection device under harsh environment, 2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo).

3. Zhuojun Chen, Yemin Dong, Yi Shan, Shuxing Zhou, Total-Ionizing-Dose Mitigation of Bandgap Reference Circuits Fabricated on Radiation-Hardened SOI Process and Material, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC).

4. Zhuojun Chen, Yemin Dong, Yi Shan, Ding Ding, Shuxing Zhou, Investigation of TID effects on subthreshold bandgap reference circuits fabricated in a SOI process, 2018 RADECS Workshop & International Conference on Radiation Effects of Electronic Devices.

5. Zhuojun Chen, Min Lin, Yunlong Zheng, Zehua Sang, Shichang Zou, Rongmei Chen, Total Ionizing Dose Sensitivity of a Radiation-Tolerant Phase-Locked Loop in a 130 nm SOI Technology, 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

6. Zhuojun Chen, Min Lin, Yunlong  Zheng, Zehua Sang, Shichang Zou, Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation, 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC).

 

发明专利(申请16项,10项已授权)

1. 陈卓俊; 张仁梓; 陈迪平; 卢谆; 胡袁源, 一种具有工艺补偿的低温度系数全MOS型电流源电路, ZL 201810176067.9 (授权) 

2. 陈卓俊; 胡袁源, 一种抗单粒子加固的分频器电路, 2018, 中国, ZL 201810176140.2 (授权) 

3. 陈卓俊; 曾云; 彭伟; 金湘亮; 张云; 吴志强, 静电保护器件, ZL 201810496599.0 (授权)

4. 吴铭; 陈卓俊; 曾云; 彭伟; 吴志强, 可控硅静电保护器件, ZL 201811253429.6 (授权)


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